By D. S. Ballantine Jr., Robert M. White, S. J. Martin, Antonio J. Ricco, E. T. Zellers, G. C. Frye, H. Wohltjen, Moises Levy, Richard Stern
Covers a wide selection of sensors with specialize in analyte-film interactions for numerous physical/chemical absorption strategies. rather attention-grabbing is the comparability of transients for reversible and irreversible interactions.
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Extra resources for Acoustic Wave Sensors: Theory, Design
5) can be used to describe the electrical response of the perturbed device. 5b, is most convenient to use. 7. This model contains the elements Co*, L1, Cl, and R1 corresponding to the unperturbed resonator. 7a. 2o) Vx lY=O where Txy is the sinusoidal steady-state shear stress (force per area in the xdirection on a y-normal plane) imposed on the contacting medium by the resonator, and Vx is the resulting x-directed surface shear particle velocity. Zs is a complex quantity: the real part, Re(Zs), corresponds to the component of surface stress in phase with the surface particle velocity and represents mechanical power dissipation at the surface; the imaginary part, Im(Zs), corresponds to the stress component 90 ~ out-of-phase with particle velocity and represents mechanical energy storage at the surface.
Pergamon: New York, Ch. 1 (1986). 3. Brekhovskikh, L. and Goncharov, V. Mechanics of Continua and Wave Dynamics; Springer-Verlag: New York, (1982). 4. Martin, S. ; Ricco, A. ; Niemczyk, T. ; Frye, G. C. Sensors and Actuators, 20, 253-268 (1989). 5. Nye, J. F. Physical Properties of Crystals; Clarendon Press: Oxford (1957). 6. IEEE Standard on Piezoelectricity 176-1987; IEEE Press: Piscataway, NJ (1986). Chapter 3 Acoustic Wave Sensors and Responses Devices based on piezoelectric crystals, which allow transduction between electrical and acoustic energies, have been constructed in a number of configurations for sensor applications and materials characterization.
See Ref. . ) 54 3. Acoustic Wave Sensors and Responses toward lower frequency without affecting the admittance magnitude. The admittance of the TSM resonator under mass loading can be obtained from the unperturbed case by the addition of the inductance L2 to the motional arm of the equivalent circuit. This element represents the increased kinetic energy contributed by the mass layer moving synchronously with the TSM resonator surface. 14) after adding an inductance value L2 = 188/xH corresponding to the surface mass density of 225/xg/cm 2.